Kingston Technology ValueRAM KVR16N11/8 memory module 8 GB 1 x 8 GB DDR3 1600 MHz

> JEDEC standard 1.5V Power Supply

> VDDQ = 1.5V

> 800MT/s fCK for 1600Mb/sec/pin

> 8 independent internal banks

> Programmable CAS latency: 11, 10, 9, 8, 7, 6

> Programmable Additive Latency: 0, CL - 2, or CL - 1 clock

> 8-bit pre-fetch

> Burst Length: 8 (interleave without any limit, sequential with starting address “000” only), 4 with tCCD = 4 which does not allow seamless read or write (either on the fly using A12 or MRS)

> Bi-directional Differential Data Strobe

> Internal (self) calibration: Internal self calibration through ZQ pin (RZQ: 240 ohm ± 1%)

> On Die Termination using ODT pin

> Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at 85°C < TCASE < 95°Cº

> Asynchronous Reset

> PCB: Height 0.740” (18.75mm) or 1.180” (30.00mm)