> Power Supply: VDD = 1.2V

> VDDQ = 1.2V

> VPP = 2.5V

> VDDSPD = 2.20V to 3.60V

> Functionality and operations comply with the DDR4 SDRAM datasheet

> 16 internal banks

> Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for

> the banks in the same or different bank group accesses are available

> Data transfer rates: PC4-3200, PC4-2933, PC4-2666, PC4-2400, PC4-2133, PC4-1866, PC4-1600

> Bi-Directional Differential Data Strobe

> 8 bit pre-fetch

> Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop)

> Supports ECC error correction and detection

> On-Die Termination (ODT)

> Temperature sensor with integrated SPD

> This product is in compliance with the RoHS directive

> Per DRAM Addressability is supported

> Internal Vref DQ level generation is available

> Write CRC is supported at all speed grades

> CA parity (Command/Address Parity) mode is supported

> RoHS Compliant and Halogen-Free